IRFP264NPBF

HEXFET, TO-247, 31A

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Price:: US $1.20~2.00 / piece [Get Latest Price]

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	US $1.20~2.00

PartNumber:: IRFP264NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-07-08

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Part Number:IRFP264NPBF
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Product Summary

The IRFP264NPBF is a HEXFET. The IRFP264NPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The package of the IRFP264NPBF is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Parametrics

IRFP264NPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 44A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 31 A; (3)IDM, Pulsed Drain Current: 170A; (4)PD @TC = 25℃, Power Dissipation: 380 W; (5)Linear Derating Factor: 2.6 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS, Single Pulse Avalanche Energy: 520 mJ; (8)IAR, Avalanche Current:25 A; (9)EAR, Repetitive Avalanche Energy: 38 mJ; (10)dv/dt, Peak Diode Recovery dv/dt: 8.7 V/ns; (11)TJ, TSTG , Operating Junction and Storage Temperature Range -55 to + 175℃; (12)Soldering Temperature, for 10 seconds 300℃ (1.6mm from case ); (13)Mounting torque, 6-32 or M3 srew 10 lbf·in (1.1N·m).

Features

IRFP264NPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirement; (8)lead free.