Product Summary
The IRF3710 is a Power MOSFET. The device utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF3710 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF3710 absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 57A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 40 A; (3)IDM, Pulsed Drain Current: 230A; (4)PD @TC = 25℃, Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)IAR, Avalanche Current: 28 A; (8)EAR, Repetitive Avalanche Energy: 20 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 5.8 V/ns; (10)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175℃.
Features
IRF3710 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF3710 |
International Rectifier |
MOSFET N-CH 100V 57A TO-220AB |
Data Sheet |
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IRF3710L |
MOSFET N-CH 100V 57A TO-262 |
Data Sheet |
Negotiable |
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IRF3710LPBF |
International Rectifier |
MOSFET MOSFT 100V 57A 23mOhm 86.7nC |
Data Sheet |
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IRF3710PBF |
International Rectifier |
MOSFET MOSFT 100V 57A 23mOhm 86.7nC |
Data Sheet |
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IRF3710S |
International Rectifier |
MOSFET N-CH 100V 57A D2PAK |
Data Sheet |
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IRF3710S/L |
Other |
Data Sheet |
Negotiable |
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IRF3710STRLPBF |
International Rectifier |
MOSFET MOSFT 100V 57A 23mOhm 86.7nC |
Data Sheet |
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IRF3710ZGPBF |
International Rectifier |
MOSFET |
Data Sheet |
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