IRF3710

Power MOSFET, TO-220, 57A, ± 20 V, 200 W, Advanced Process Technology, Ultra Low On-Resistance

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Price:: US $0.80~1.50 / piece [Get Latest Price]

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	US $0.80~1.50

PartNumber:: IRF3710

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-07-10

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Part Number:IRF3710
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Product Summary

The IRF3710 is a Power MOSFET. The device utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF3710 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF3710 absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 57A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 40 A; (3)IDM, Pulsed Drain Current: 230A; (4)PD @TC = 25℃, Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)IAR, Avalanche Current: 28 A; (8)EAR, Repetitive Avalanche Energy: 20 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 5.8 V/ns; (10)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175℃.

Features

IRF3710 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.