(China (Mainland))
Product Summary
The 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. It is used in 10 to 14 watts output power class AB amplifiers applications in HF band.
Parametrics
2SC1969 absolute maximum ratings: (1)VCBO Collector to base voltage: 60V; (2)VEBO Emitter to base voltage: 5V; (3)VCEO Collector to emitter voltage: 25V; (4)IC Collector current: 6A; (5)Po Collector dissipation: 1 .7W/20W; (6)Tj Junction temperature: 150℃; (7)Tstg Storage temperatur: -55 to 150℃; (8)Rth-a Thermal resistance: 73.5℃/W; Rth-c: 6.25℃/W.
Features
2SC1969 features: (1)High power gain: Gpe≥12dB @ VCC = 12V, P0 = 16W, f = 27MHz; (2)Emitter ballasted construction for high reliatblity and good performances; (3)TO-220 package similarly is combinient for mounting; (4)Ability of withstanding infinite load VSWR when operated at Vcc = 16V, P0 = 20W, f = 27MHz.
Diagrams
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 2SC1969 |
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Data Sheet |
Negotiable |
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