Product Summary

The 2N2905A is a high speed medium power PNP switching transistor.

Parametrics

2N2905A absolute maximum ratings: (1)VCBO Collector - Base Voltage: –60V; (2)VCEO Collector - Emitter Voltage: –60V; (3)VEBO Emitter - Base Voltage: –5V; (4)IC Collector Current Continuous: 600mA; (5)PD Total Device Dissipation @ TA = 25℃: 600mW; (6) Derate above 25℃: 3.43mW / ℃; (7)PD Total Device Dissipation @ TC = 25℃: 3W ; (8)Derate above 25℃: 17.2mW / ℃; (9)TJ , TSTG Operating and Storage Junction Temperature Range: –65 to +200℃.

Features

2N2905A features: (1)Silicon planar epitaxial PNP transistor; (2)High speed saturated switching; (3)Also available in ceramic surface; (4)Mount package.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2N2905A
2N2905A

Central Semiconductor

Transistors Bipolar (BJT) PNP Gen Pur SS

Data Sheet

0-1: $0.71
1-25: $0.68
25-100: $0.65
100-250: $0.61
2N2905AL
2N2905AL

Other


Data Sheet

Negotiable