(China (Mainland))
Product Summary
The MG50Q2YS40 is a silicon N channel IGBT. The applications of it are high power switching and motor control.
Parametrics
MG50Q2YS40 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)gate-emitter voltage:±20V; (3)collector current: IC:50A, ICP:100A; (4)forward current: IF:50A, IFN:100A; (5)collector power dissipation:400W; (6)junction temperature:150℃; (7)storage temperature range:-40℃ to +125℃; (8)isolation voltage:2500V.
Features
MG50Q2YS40 features: (1)high input impedance; (2)high speed:tf=0.5us(max.), trr=0.5us(max.); (3)low saturation voltage: VCE(sat)=4.0V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.
Diagrams
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Negotiable |
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| Image | Part No | Mfg | Description | |
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MG50Q2YS40 |
Other |
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Data Sheet |
Negotiable |
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