(China (Mainland))
Product Summary
The IRFK2D250 is an isolated base power hex-pak assembly. The IRFK2D250 utilises the well-proven HEXFET die, combining low on-state resistance with high transconductance. These superior technology die are assembled by stated of the art techniques into the TO-240 package, featuring 2.5kV rms isolation and solid M5 screw connections.
Parametrics
IRFK2D250 absolute maximum ratings: (1)continuous drain current:12A; (2)continuous drain current:8A; (3)pulse drain current:48A; (4)maximum power dissipation:500W; (5)gate-to-source voltage:20V; (6)R.M.S. isolation voltage, circuit to base:2.5kV; (7)operating junction temperature range:-40℃ to +150℃; (8)storage temperature range:-40℃ to +150℃.
Features
IRFK2D250 features: (1)high current capability; (2)UL recognised E78996; (3)electrically isolated base plate; (4)easy assembly into equipment.
Diagrams
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 IRFK2D450 |
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IRFK3D450 |
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IRFK4HE50 |
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