Product Summary
The QM75DY-H is a MITSUBISHI transistor module, which is designed for high power switching.
Parametrics
Absolute maximum ratings: (1)Collector-emitter voltage: 600 V; (2)Collector-emitter voltage: 600 V; (3)Collector-base voltage: 600 V; (4)Emitter-base voltage: 7 V; (5)Collector current: 75 A; (6)Collector reverse current: 75 A; (7)Collector dissipation: 350 W; (8)Base current: 4.5 A; (9)Surge collector reverse current: 750 A; (10)Junction temperature: -40 to +150℃; (11)Storage temperature: -40 to +125℃.
Features
Features: (1)IC Collector current: 75A; (2)VCEX Collector-emitter voltage: 600V; (3)hFE DC current gain: 75; (4)Insulated Type; (5)UL Recognized: Yellow Card No. E80276 (N), File No. E80271.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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QM75DY-H |
Other |
Data Sheet |
Negotiable |
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QM75DY-HB |
Other |
Data Sheet |
Negotiable |
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