Product Summary

Silicon N-channel enhancement mode vertical D-MOS transistor BLF242 is designed for professional transmitter applications in the HF/VHF frequency range. The transistor BLF242 is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.

Parametrics

BLF242 absolute maximum ratings: (1)VDS drain-source voltage: - 65 V; (2)±VGS gate-source voltage: - 20 V; (3)ID DC drain current: - 1 A; (4)Ptot total power dissipation up to Tmb = 25 ℃: - 16 W; (5)Tstg storage temperature: -65 150 ℃; (6)Tj junction temperature: - 200 ℃.

Features

BLF242 features: (1)High power gain; (2)Low noise; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch; (6)Gold metallization ensures excellent reliability.

Diagrams

BLF242 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF242,112
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