(China (Mainland))
Product Summary
The 2SK3170 is a silicon N Channel MOS FET UHF power amplifier.
Parametrics
2SK3170 absolute maximum ratings: (1)Drain to source voltage VDSS: 60 V; (2)Gate to source voltage VGSS: ±10 V; (3)Drain current ID: 16 A; (4)Drain peak current ID(pulse): 32 A; (5)Channel dissipation Pch: 252 W; (6)Channel temperature Tch: 175 ℃; (7)Storage temperature Tstg: –55 to +150 ℃.
Features
2SK3170 features: (1)High power output, High gain, High efficiency: P1dB = 220W , PG = 15.3dB , ηD = 61% (at P1dB) typ. (f = 860MHz); (2)Compact package: suitable for push - pull circuit.
Diagrams
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2SK3017(F) |
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