Product Summary

The MG50H2YS1 is a silicon N channel IGBT. The applications of it are high power switching and motor control.

Parametrics

MG50H2YS1 absolute maximum ratings: (1)collector-emitter voltage:500V; (2)gate-emitter voltage:±20V; (3)collector current: IC:50A, ICP:100A; (4)forward current: IF:50A, IFN:100A; (5)collector power dissipation:300W; (6)junction temperature:150℃; (7)storage temperature range:-40℃ to +125℃; (8)isolation voltage:2500V.

Features

MG50H2YS1 features: (1)high input impedance; (2)high speed:tf=1.0us(max.), trr=0.5us(max.); (3)low saturation voltage: VCE(sat)=5.0V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.

Diagrams

MG50H2YS1 circuit diagram

MG50Q2YS40
MG50Q2YS40
Other

Data Sheet
Negotiable