(China (Mainland))
Product Summary
The MG30G1BL2 is a memory cards module of Toshiba Semiconductor.
Parametrics
MG30G1BL2 maximum ratings: (1)collector power dissipation (Pc): 250W; (2)collector-base voltage (Ucb): 600V; (3)collector-emitter voltage (Uce): 450V; (4)emitter-base voltage (Ueb): 6V; (5)collector current (Ic max): 30A; (6)junction temperature (Tj): 150℃; (7)Collector capacitance (Cc), Pf: 250; (8)Forward current transfer ratio (hFE), min/max: 100MIN; (9)Manufacturer of MG30G1BL2 transistor: TOSHIBA; (10)Package of MG30G1BL2 transistor: X99; (11)Application of MG30G1BL2 transistor: Darlington, Power, Switching.
 |
 MG300Q2YS60A |
|
IGBT MOD CMPCT DUAL 1200V 300A |
Data Sheet |
Negotiable |
|
||||
|
MG300Q2YS61 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG300Q2YS65H |
Other |
|
Data Sheet |
Negotiable |
|
||||
