Product Summary
The IRFP260N is a Power MOSFET. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
Absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V:50A; (2)Continuous Drain Current, VGS @ 10V:35A; (3)Pulsed Drain Current:200A; (4)Power Dissipation:300W; (5)Linear Derating Factor:2.0 W/℃; (6)Gate-to-Source Voltage:±20 V; (7)Single Pulse Avalanche Energy:560 mJ; (8)Avalanche Current:50 A; (9)Repetitive Avalanche Energy:30 mJ; (10) Peak Diode Recovery dv/dt:10 V/ns; (11)Operating Junction and Storage Temperature Range:-55℃ to +175℃; (12)Soldering Temperature, for 10 seconds 300℃ (1.6mm from case ).
Features
Features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.
Diagrams
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![]() IRFP260N |
![]() International Rectifier |
![]() MOSFET N-CH 200V 50A TO-247AC |
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![]() IRFP260NPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 200V 49A 40mOhm 156nCAC |
![]() Data Sheet |
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