Product Summary

The G4PC40W is a insulated gate bipolar transistor.


G4PC40W absolute maximum ratings: (1)VCES, Collector-to-Emitter Breakdown Voltage: 600 V; (2)IC @ TC = 25℃, Continuous Collector Current: 40A; (3)IC @ TC = 100℃, Continuous Collector Current: 20 A; (4)ICM, Pulsed Collector Current: 160A; (5)ILM, Clamped Inductive Load Current: 160A; (6)VGE, Gate-to-Emitter Voltage: ±20 V; (7)EARV, Reverse Voltage Avalanche Energy: 160 mJ; (8)PD @ TC = 25℃, Maximum Power Dissipation: 160W; (9)PD @ TC = 100℃, Maximum Power Dissipation: 65W; (10)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 150℃; (11)Soldering Temperature, for 10 seconds: 300℃ (0.063 in. (1.6mm) from case ); (12)Mounting torque, 6-32 or M3 screw: 10 lbf·in (1.1N·m).


G4PC40W features: (1)Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications; (2)Industry-benchmark switching losses improve efficiency of all power supply topologies; (3)50% reduction of Eoff parameter; (4)Low IGBT conduction losses; (5)Latest-generation IGBT design and constructionoffers tighter parameters distribution, exceptional reliability; (6)lead free.