(China (Mainland))
Product Summary
The FDS6900AS is a dual N-Channel PowerTrench SyncFET. It is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. The FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.
Parametrics
FDS6900AS absolute maxing ratings: (1)VDSS Drain-Source Voltage: Q2=30V, Q1=30 V; (2)VGSS Gate-Source Voltage: Q2=±20, Q1=±20 V; (3)ID Drain Current Continuous: Q2=8.2A, Q1=6.9A; Pulsed: Q2=30A, Q1=20A; (4)PD Power Dissipation for Dual Operation: 2W; Power Dissipation for Single Operation: 1.6W/1W/0.9W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDS6900AS features: (1)Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.2A, 30V RDS(on)=22mΩ@ VGS=10V RDS(on)=28mΩ@ VGS = 4.5V; (2)Q1: Optimized for low switching losses Low Gate Charge (11nC typical)6.9A, 30V RDS(on)=27mΩ@ VGS=10V RDS(on) =34mΩ@ VGS= 4.5V; (3)100% RG (Gate Resistance) Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDS6900AS |
Fairchild Semiconductor |
MOSFET Dual NCh PowerTrench |
Data Sheet |
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