(China (Mainland))
Product Summary
The SI9945AEY is a dual N-channel 60V(D-S), 175℃ MOSFET.
Parametrics
SI9945AEY absolute maxing ratings: (1)Drain-Source Voltage VDS: 60V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ = 175℃) ID TA = 25℃: ±3.7A; TA = 70℃: ±3.2A; (4)Pulsed Drain Current IDM: 25A; (5)Continuous Source Current (Diode Conduction) IS: 2A; (6)Maximum Power Dissipationa PD TA = 25℃, 2.4W; TA = 70℃: 1.7W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175℃.
Features
SI9945AEY specifications: (1)On the conditions of VDS = VGS, ID = 250 μA, Gate Threshold Voltage VGS(th): min=1.0 V; (2)On the condditions of VDS = 0 V, VGS = ±20 V, Gate-Body Leakage IGSS: max=±100 nA; (3)On the condditions of VDS = 60 V, VGS = 0 V, Zero Gate Voltage Drain Current IDSS: max=1 μA; (4)On the condditions of VDS = 60 V, VGS = 0 V TJ = 55 ℃: max=10 μA; (5)On the conditions of VDS ≥ 5 V, VGS = 10 V, On-State Drain Current ID(on): min=20 A.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI9945AEY |
Vishay/Siliconix |
MOSFET 60V 3.7A 2.4W |
Data Sheet |
Negotiable |
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|
SI9945AEY-E3 |
Vishay/Siliconix |
MOSFET 60V 3.7A 2.4W |
Data Sheet |
Negotiable |
|
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|
SI9945AEY-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 3.7A 2.4W 80mohm @ 10V |
Data Sheet |
Negotiable |
|
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|
SI9945AEY-T1-E3 |
Vishay/Siliconix |
MOSFET S0-8 60V 3.7A 2.4W |
Data Sheet |
Negotiable |
|
||||
|
SI9945AEY-T1 |
Vishay/Siliconix |
MOSFET S0-8 60V 3.7A 2.4W |
Data Sheet |
Negotiable |
|
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